Pyroelectric and Ferroelectric Properties of Hafnium Oxide Doped with Si via Plasma Enhanced ALD

Electric field and temperature scaling of polarization reversal in silicon doped hafnium oxide ferroelectric thin films

Key Laboratory of Materials Modification by Laser, Ion, and Electron Beams (Ministry of Education), School of Materials Science and Engineering, Dalian University of Technology, Dalian 116024, China State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China University of Portsmouth, Faculty of Science, SE...

Fatigue mechanism of yttrium-doped hafnium oxide ferroelectric thin films fabricated by pulsed laser deposition.

Owing to their prominent stability and CMOS compatibility, HfO2-based ferroelectric films have attracted great attention as promising candidates for ferroelectric random-access memory applications. A major reliability issue for HfO2 based ferroelectric devices is fatigue. So far, there have been a few studies on the fatigue mechanism of this material. Here, we report a systematic study of the f...

Enhanced electrocaloric and pyroelectric response from ferroelectric multilayers

multilayers M. T. Kesim, J. Zhang, S. P. Alpay, and L. W. Martin Department of Materials Science and Engineering and Institute of Materials Science, University of Connecticut, Storrs, Connecticut 06269, USA Department of Materials Science and Engineering/Materials Research Laboratory, University of Illinois, Urbana Champaign, Urbana, Illinois 61801, USA Department of Physics, University of Conn...

Piezoelectric and pyroelectric properties of ferroelectric Langmuir-Blodgett polymer films

Preparation and Study of Bismuth Oxide Doped and co-Doped with Cobalt(III) and Holmium(III) via Sol-Gel Method

In this research work the solid-solutions of (Bi2O3)1-x (Co2O3)x, [x= 0.05, 0.1] (1), (Bi2O3)1-x (Ho2O3) x, [x= 0.025, 0.05] (2), and (Bi2O3)1-x-y (Co2O3)x (Ho2O3)y</su...